PJT7603_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: MOSFET N/P-CH 50V 0.4A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.14 EUR |
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Technische Details PJT7603_R1_00001 Panjit International Inc.
Description: MOSFET N/P-CH 50V 0.4A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA, Supplier Device Package: SOT-363.
Weitere Produktangebote PJT7603_R1_00001 nach Preis ab 0.075 EUR bis 0.65 EUR
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PJT7603_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; -250/400mA; 350mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: -250/400mA Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5/6Ω Mounting: SMD Gate charge: 0.95/1.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PJT7603_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; -250/400mA; 350mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: -250/400mA Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5/6Ω Mounting: SMD Gate charge: 0.95/1.1nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT7603_R1_00001 | Hersteller : Panjit |
MOSFET Complementary Enhancement Mode MOSFETESD Protected |
auf Bestellung 2489 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7603_R1_00001 | Hersteller : Panjit International Inc. |
Description: MOSFET N/P-CH 50V 0.4A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 11503 Stücke: Lieferzeit 10-14 Tag (e) |
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PJT7603-R1-00001 | Hersteller : Panjit |
MOSFET SOT-363/MOS/SOT/NFET-60TSNP |
Produkt ist nicht verfügbar |