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PJX8601_R1_00001

PJX8601_R1_00001 Panjit

PJX8601-1869034.pdf Hersteller: Panjit
MOSFET Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 3968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.47 EUR
100+ 0.32 EUR
1000+ 0.19 EUR
4000+ 0.16 EUR
8000+ 0.14 EUR
24000+ 0.13 EUR
Mindestbestellmenge: 5
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Technische Details PJX8601_R1_00001 Panjit

Description: COMPLEMENTARY ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA, Supplier Device Package: SOT-563.

Weitere Produktangebote PJX8601_R1_00001 nach Preis ab 0.17 EUR bis 0.63 EUR

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Preis ohne MwSt
PJX8601_R1_00001 PJX8601_R1_00001 Hersteller : Panjit International Inc. PJX8601.pdf Description: COMPLEMENTARY ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 4030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
37+ 0.48 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 28
PJX8601_R1_00001 PJX8601_R1_00001 Hersteller : Panjit International Inc. PJX8601.pdf Description: COMPLEMENTARY ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-563
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