PJX8603_R1_00001 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3950 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 545+ | 0.13 EUR |
| 605+ | 0.12 EUR |
| 725+ | 0.099 EUR |
| 760+ | 0.094 EUR |
| 4000+ | 0.089 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJX8603_R1_00001 PanJit Semiconductor
Description: MOSFET N/P-CH 50V/60V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 50V, 60V, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote PJX8603_R1_00001 nach Preis ab 0.094 EUR bis 0.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PJX8603_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Gate charge: 0.95/1.1nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3950 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
PJX8603_R1_00001 | Hersteller : Panjit International Inc. |
Description: MOSFET N/P-CH 50V/60V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V, 60V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 6880 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PJX8603_R1_00001 | Hersteller : Panjit |
MOSFET Complementary Enhancement Mode MOSFETESD Protected |
auf Bestellung 6945 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
PJX8603_R1_00001 | Hersteller : Panjit International Inc. |
Description: MOSFET N/P-CH 50V/60V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V, 60V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |