PMPB15XP,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V
auf Bestellung 5913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
27+ | 0.66 EUR |
100+ | 0.46 EUR |
500+ | 0.36 EUR |
1000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMPB15XP,115 Nexperia USA Inc.
Description: NEXPERIA - PMPB15XP,115 - Leistungs-MOSFET, p-Kanal, 12 V, 11.8 A, 0.015 ohm, SOT-1220, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 12V, rohsCompliant: YES, Dauer-Drainstrom Id: 11.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 680mV, euEccn: NLR, Verlustleistung: 3.5W, Bauform - Transistor: SOT-1220, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.015ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote PMPB15XP,115
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
PMPB15XP,115 | Hersteller : Nexperia | MOSFET PMPB15XP/SOT1220/SOT1220 |
auf Bestellung 4522 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB15XP,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMPB15XP,115 - Leistungs-MOSFET, p-Kanal, 12 V, 11.8 A, 0.015 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 11.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 680mV euEccn: NLR Verlustleistung: 3.5W Bauform - Transistor: SOT-1220 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 3059 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB15XP,115 | Hersteller : NEXPERIA | Trans MOSFET P-CH 12V 8.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB15XP,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Power dissipation: 1.7W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMPB15XP,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V |
Produkt ist nicht verfügbar |
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PMPB15XP,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Power dissipation: 1.7W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |