PMV28UNEAR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 510mW (Ta), 3.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 4.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 510mW (Ta), 3.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMV28UNEAR Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.7A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 510mW (Ta), 3.9W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote PMV28UNEAR nach Preis ab 0.19 EUR bis 0.63 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMV28UNEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 4.7A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V Power Dissipation (Max): 510mW (Ta), 3.9W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 7501 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
PMV28UNEAR | Hersteller : Nexperia | MOSFET PMV28UNEA/TO-236AB/REEL 7" Q3/ |
auf Bestellung 17955 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
PMV28UNEAR | Hersteller : NEXPERIA | PMV28UNEAR SMD N channel transistors |
Produkt ist nicht verfügbar |