PMV42ENER Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
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Technische Details PMV42ENER Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V, Power Dissipation (Max): 500mW (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V.
Weitere Produktangebote PMV42ENER nach Preis ab 0.14 EUR bis 0.65 EUR
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PMV42ENER | Hersteller : Nexperia |
MOSFET PMV42ENE/SOT23/TO-236AB |
auf Bestellung 76318 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV42ENER | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4.4A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V Power Dissipation (Max): 500mW (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V |
auf Bestellung 12229 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV42ENER | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.7A; Idm: 18A Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.7A On-state resistance: 57mΩ Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 9nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV42ENER | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.7A; Idm: 18A Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.7A On-state resistance: 57mΩ Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 9nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A |
Produkt ist nicht verfügbar |