PMZ1000UN,315 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 480MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.11 EUR |
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Technische Details PMZ1000UN,315 Nexperia USA Inc.
Description: NEXPERIA - PMZ1000UN,315 - Leistungs-MOSFET, n-Kanal, 30 V, 480 mA, 1 ohm, DFN1006, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 480mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 700mV, euEccn: NLR, Verlustleistung: 350mW, Bauform - Transistor: DFN1006, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote PMZ1000UN,315 nach Preis ab 0.12 EUR bis 0.78 EUR
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PMZ1000UN,315 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 480MA DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V |
auf Bestellung 21896 Stücke: Lieferzeit 10-14 Tag (e) |
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PMZ1000UN,315 | Hersteller : Nexperia |
MOSFET PMZ1000UN/SOT883/XQFN3 |
auf Bestellung 10845 Stücke: Lieferzeit 10-14 Tag (e) |
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PMZ1000UN,315 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMZ1000UN,315 - Leistungs-MOSFET, n-Kanal, 30 V, 480 mA, 1 ohm, DFN1006, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 480mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: DFN1006 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 17941 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMZ1000UN,315 | Hersteller : NXP |
Description: NXP - PMZ1000UN,315 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 10843200 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMZ1000UN,315 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMZ1000UN,315 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 10843200 Stücke: Lieferzeit 14-21 Tag (e) |
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PMZ1000UN,315 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 0.48A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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| PMZ1000UN,315 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 480mA; Idm: 1.8A; 350mW Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.48A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 0.89nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| PMZ1000UN,315 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 480mA; Idm: 1.8A; 350mW Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.48A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 0.89nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |