PMZ370UNEYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 900MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.12 EUR |
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Technische Details PMZ370UNEYL Nexperia USA Inc.
Description: MOSFET N-CH 30V 900MA DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: SOT-883, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V.
Weitere Produktangebote PMZ370UNEYL nach Preis ab 0.086 EUR bis 0.65 EUR
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PMZ370UNEYL | Hersteller : Nexperia |
MOSFET PMZ370UNE/SOT883/XQFN3 |
auf Bestellung 7935 Stücke: Lieferzeit 10-14 Tag (e) |
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PMZ370UNEYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 900MA DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: SOT-883 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V |
auf Bestellung 25311 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMZ370UNEYL | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 560mA; Idm: 3.6A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.56A Pulsed drain current: 3.6A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 860mΩ Mounting: SMD Gate charge: 1.16nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMZ370UNEYL | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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PMZ370UNEYL | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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| PMZ370UNEYL | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 560mA; Idm: 3.6A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.56A Pulsed drain current: 3.6A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 860mΩ Mounting: SMD Gate charge: 1.16nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |