auf Bestellung 6524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.49 EUR |
10+ | 0.33 EUR |
100+ | 0.15 EUR |
1000+ | 0.09 EUR |
5000+ | 0.084 EUR |
10000+ | 0.07 EUR |
25000+ | 0.062 EUR |
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Technische Details PRMH11Z Nexperia
Description: TRANS PREBIAS 2NPN 50V DFN1412-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 480mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Frequency - Transition: 230MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: DFN1412-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote PRMH11Z nach Preis ab 0.11 EUR bis 0.56 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PRMH11Z | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN 50V DFN1412-6 Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 480mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 230MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: DFN1412-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
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PRMH11Z | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN 50V DFN1412-6 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 480mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 230MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: DFN1412-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |