R6009RND3TL1 ROHM Semiconductor
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
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2500+ | 1.17 EUR |
10000+ | 1.14 EUR |
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Technische Details R6009RND3TL1 ROHM Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 7V @ 5.5mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V.
Weitere Produktangebote R6009RND3TL1 nach Preis ab 1.2 EUR bis 2.62 EUR
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R6009RND3TL1 | Hersteller : Rohm Semiconductor |
Description: 600V 9A TO-252, PRESTOMOS WITH I Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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R6009RND3TL1 | Hersteller : Rohm Semiconductor |
Description: 600V 9A TO-252, PRESTOMOS WITH I Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V |
auf Bestellung 2615 Stücke: Lieferzeit 10-14 Tag (e) |
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R6009RND3TL1 | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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R6009RND3TL1 | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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