R6018JNXC7G Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 18A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.2mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Description: MOSFET N-CH 600V 18A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.2mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 3154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.94 EUR |
50+ | 6.28 EUR |
100+ | 5.38 EUR |
500+ | 4.79 EUR |
1000+ | 4.1 EUR |
2000+ | 3.86 EUR |
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Technische Details R6018JNXC7G Rohm Semiconductor
Description: MOSFET N-CH 600V 18A TO220FM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 7V @ 4.2mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V.
Weitere Produktangebote R6018JNXC7G nach Preis ab 3.87 EUR bis 7.97 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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R6018JNXC7G | Hersteller : ROHM Semiconductor | MOSFET R6018JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications. |
auf Bestellung 976 Stücke: Lieferzeit 10-14 Tag (e) |
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