R6020ENXC7G Rohm Semiconductor
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 4.12 EUR |
| 50+ | 3.21 EUR |
| 100+ | 2.89 EUR |
| 500+ | 2.46 EUR |
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Technische Details R6020ENXC7G Rohm Semiconductor
Description: 600V 20A TO-220FM, LOW-NOISE POW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.
Weitere Produktangebote R6020ENXC7G nach Preis ab 3.49 EUR bis 8.41 EUR
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R6020ENXC7G | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
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R6020ENXC7G | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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R6020ENXC7G | Hersteller : Rohm Semiconductor |
Description: 600V 20A TO-220FM, LOW-NOISE POW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 956 Stücke: Lieferzeit 10-14 Tag (e) |
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R6020ENXC7G | Hersteller : ROHM Semiconductor |
MOSFET 600V POWER MOSFET |
auf Bestellung 5986 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6020ENXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP Mounting: THT Drain-source voltage: 600V Drain current: 20A On-state resistance: 0.36Ω Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Gate charge: 60nC Case: TO220FP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| R6020ENXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP Mounting: THT Drain-source voltage: 600V Drain current: 20A On-state resistance: 0.36Ω Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Gate charge: 60nC Case: TO220FP |
Produkt ist nicht verfügbar |