R6024ENJTL Rohm Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 35+ | 4.48 EUR |
| 50+ | 4.16 EUR |
| 100+ | 3.87 EUR |
| 250+ | 3.61 EUR |
| 500+ | 3.37 EUR |
| 1000+ | 3.15 EUR |
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Technische Details R6024ENJTL Rohm Semiconductor
Description: MOSFET N-CH 600V 24A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LPTS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V.
Weitere Produktangebote R6024ENJTL nach Preis ab 3.15 EUR bis 6.09 EUR
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R6024ENJTL | Hersteller : ROHM Semiconductor |
 MOSFET 10V Drive Nch MOSFET |
auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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R6024ENJTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 24A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
auf Bestellung 831 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6024ENJTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 72A Power dissipation: 245W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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R6024ENJTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 24A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
Produkt ist nicht verfügbar |
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| R6024ENJTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 72A Power dissipation: 245W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |