R6507ENXC7G Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 650V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.58 EUR |
| 50+ | 3.69 EUR |
| 100+ | 3.03 EUR |
| 500+ | 2.57 EUR |
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Technische Details R6507ENXC7G Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V.
Weitere Produktangebote R6507ENXC7G nach Preis ab 2.08 EUR bis 4.61 EUR
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R6507ENXC7G | Hersteller : ROHM Semiconductor |
MOSFET 650V POWER MOSFET |
auf Bestellung 1988 Stücke: Lieferzeit 10-14 Tag (e) |
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