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R8002ANJGTL

R8002ANJGTL Rohm Semiconductor

r8002anjgtl-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) LPTS
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
43+3.64 EUR
50+ 3.38 EUR
Mindestbestellmenge: 43
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Technische Details R8002ANJGTL Rohm Semiconductor

Description: NCH 800V 2A POWER MOSFET : R8002, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.

Weitere Produktangebote R8002ANJGTL nach Preis ab 2.5 EUR bis 4.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
R8002ANJGTL R8002ANJGTL Hersteller : Rohm Semiconductor datasheet?p=R8002ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 800V 2A POWER MOSFET : R8002
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.86 EUR
10+ 4.08 EUR
100+ 3.3 EUR
500+ 2.93 EUR
Mindestbestellmenge: 4
R8002ANJGTL R8002ANJGTL Hersteller : ROHM Semiconductor datasheet?p=R8002ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET MOSFET
auf Bestellung 1979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.89 EUR
10+ 4.1 EUR
25+ 3.87 EUR
100+ 3.33 EUR
250+ 3.15 EUR
500+ 2.96 EUR
1000+ 2.5 EUR
R8002ANJGTL R8002ANJGTL Hersteller : Rohm Semiconductor datasheet?p=R8002ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 800V 2A POWER MOSFET : R8002
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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