Produkte > ROHM SEMICONDUCTOR > R8006KND3TL1
R8006KND3TL1

R8006KND3TL1 ROHM Semiconductor

datasheet?p=R8006KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET NCH 800V 6A POWER MOSFET
auf Bestellung 4882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.46 EUR
10+ 4.58 EUR
25+ 4.33 EUR
100+ 3.71 EUR
250+ 3.5 EUR
500+ 3.31 EUR
1000+ 3.08 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details R8006KND3TL1 ROHM Semiconductor

Description: HIGH-SPEED SWITCHING NCH 800V 6A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V.

Weitere Produktangebote R8006KND3TL1 nach Preis ab 3.22 EUR bis 6.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
R8006KND3TL1 R8006KND3TL1 Hersteller : Rohm Semiconductor datasheet?p=R8006KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.09 EUR
10+ 5.47 EUR
100+ 4.48 EUR
500+ 3.82 EUR
1000+ 3.22 EUR
Mindestbestellmenge: 3
R8006KND3TL1 R8006KND3TL1 Hersteller : Rohm Semiconductor datasheet?p=R8006KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Produkt ist nicht verfügbar