R8008ANJGTL Rohm Semiconductor
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 6.24 EUR |
| 26+ | 5.76 EUR |
| 50+ | 5.33 EUR |
| 100+ | 4.96 EUR |
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Technische Details R8008ANJGTL Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote R8008ANJGTL nach Preis ab 4.72 EUR bis 10.24 EUR
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R8008ANJGTL | Hersteller : ROHM Semiconductor |
 MOSFET MOSFET |
auf Bestellung 2470 Stücke: Lieferzeit 10-14 Tag (e) |
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R8008ANJGTL | Hersteller : Rohm Semiconductor |
Description: NCH 800V 8A POWER MOSFET : R8008 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 978 Stücke: Lieferzeit 10-14 Tag (e) |
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| R8008ANJGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK Pulsed drain current: 32A Power dissipation: 195W Gate charge: 38nC Polarisation: unipolar Drain current: 8A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: D2PAK On-state resistance: 1.54Ω Mounting: SMD Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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R8008ANJGTL | Hersteller : Rohm Semiconductor |
Description: NCH 800V 8A POWER MOSFET : R8008 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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| R8008ANJGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK Pulsed drain current: 32A Power dissipation: 195W Gate charge: 38nC Polarisation: unipolar Drain current: 8A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: D2PAK On-state resistance: 1.54Ω Mounting: SMD |
Produkt ist nicht verfügbar |