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RBN40H65T1FPQ-A0#CB0

RBN40H65T1FPQ-A0#CB0 Renesas Electronics


r07ds1379ej0121_rbn40h65t1fpqa0-2931044.pdf Hersteller: Renesas Electronics
IGBTs POWER TRANSISTOR 650V 40A IGBT G8H
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Lieferzeit 10-14 Tag (e)
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1+10.45 EUR
10+ 9.86 EUR
25+ 8.36 EUR
100+ 7.71 EUR
250+ 6.42 EUR
500+ 5.37 EUR
1000+ 5.33 EUR
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Technische Details RBN40H65T1FPQ-A0#CB0 Renesas Electronics

Description: IGBT TRENCH 650V 80A TO247A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 22ns/96ns, Switching Energy: 620µJ (on), 520µJ (off), Test Condition: 400V, 40A, 16Ohm, 15V, Gate Charge: 28 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 185 W.

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RBN40H65T1FPQ-A0#CB0 RBN40H65T1FPQ-A0#CB0 Hersteller : Renesas Electronics Corporation rbn40h65t1fpq-a0-datasheet-0 Description: IGBT TRENCH 650V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/96ns
Switching Energy: 620µJ (on), 520µJ (off)
Test Condition: 400V, 40A, 16Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 185 W
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