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RCJ451N20TL

RCJ451N20TL ROHM Semiconductor

datasheet?p=RCJ451N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET RCJ451N20 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
auf Bestellung 1921 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.85 EUR
10+ 5.76 EUR
25+ 5.44 EUR
100+ 4.65 EUR
250+ 4.4 EUR
500+ 4.15 EUR
1000+ 3.52 EUR
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Technische Details RCJ451N20TL ROHM Semiconductor

Description: 200V 45A, NCH, TO-263S, POWER MO, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V, Power Dissipation (Max): 1.56W (Ta), 211W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V.

Weitere Produktangebote RCJ451N20TL nach Preis ab 4.16 EUR bis 6.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RCJ451N20TL Hersteller : Rohm Semiconductor datasheet?p=RCJ451N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 200V 45A, NCH, TO-263S, POWER MO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.88 EUR
10+ 5.78 EUR
100+ 4.68 EUR
500+ 4.16 EUR
Mindestbestellmenge: 3
RCJ451N20TL Hersteller : Rohm Semiconductor datasheet?p=RCJ451N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 200V 45A, NCH, TO-263S, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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