RCX511N25

RCX511N25 Rohm Semiconductor


datasheet?p=RCX511N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 51A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 605 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.96 EUR
10+ 4.16 EUR
100+ 3.37 EUR
500+ 2.99 EUR
Mindestbestellmenge: 4
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Technische Details RCX511N25 Rohm Semiconductor

Description: MOSFET N-CH 250V 51A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V, Power Dissipation (Max): 2.23W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V.

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RCX511N25 RCX511N25 Hersteller : ROHM Semiconductor rcx511n25-e-1873107.pdf MOSFET 10V Drive Nch MOSFET
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
RCX511N25 Hersteller : ROHM SEMICONDUCTOR datasheet?p=RCX511N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RCX511N25 THT N channel transistors
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