RD3G03BATTL1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: PCH -40V -35A POWER MOSFET - RD3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V
Power Dissipation (Max): 56W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.99 EUR |
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Technische Details RD3G03BATTL1 Rohm Semiconductor
Description: PCH -40V -35A POWER MOSFET - RD3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V, Power Dissipation (Max): 56W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V.
Weitere Produktangebote RD3G03BATTL1 nach Preis ab 0.93 EUR bis 3.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RD3G03BATTL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 40V 35A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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RD3G03BATTL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 40V 35A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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RD3G03BATTL1 | Hersteller : ROHM Semiconductor |
MOSFET Pch -40V -35A Power MOSFET |
auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3G03BATTL1 | Hersteller : Rohm Semiconductor |
Description: PCH -40V -35A POWER MOSFET - RD3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V Power Dissipation (Max): 56W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V |
auf Bestellung 4832 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3G03BATTL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 40V 35A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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| RD3G03BATTL1 | Hersteller : ROHM - Japan |
Transistor P-Channel MOSFET; 40V; 20V; 19,1mOhm; 35A; 56W; -55°C~150°C; RD3G03BATTL1 TRD3G03BATTL1 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| RD3G03BATTL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -35A On-state resistance: 24mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RD3G03BATTL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -35A On-state resistance: 24mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |