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RD3H080SPTL1

RD3H080SPTL1 Rohm Semiconductor

datasheet?p=RD3H080SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 2423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.99 EUR
11+ 1.62 EUR
100+ 1.26 EUR
500+ 1.07 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
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Technische Details RD3H080SPTL1 Rohm Semiconductor

Description: MOSFET P-CH 45V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V.

Weitere Produktangebote RD3H080SPTL1 nach Preis ab 0.89 EUR bis 2.08 EUR

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Preis ohne MwSt
RD3H080SPTL1 RD3H080SPTL1 Hersteller : ROHM Semiconductor datasheet?p=RD3H080SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET Pch -45V -8A TO-252(DPAK)
auf Bestellung 3316 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.08 EUR
10+ 1.88 EUR
100+ 1.46 EUR
500+ 1.21 EUR
1000+ 0.95 EUR
2500+ 0.92 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 2
RD3H080SPTL1 RD3H080SPTL1 Hersteller : Rohm Semiconductor datasheet?p=RD3H080SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 45V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
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