RF4C050APTR Rohm Semiconductor
auf Bestellung 4495 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 277+ | 0.56 EUR |
| 293+ | 0.51 EUR |
| 295+ | 0.49 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| 2000+ | 0.36 EUR |
| 3000+ | 0.33 EUR |
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Technische Details RF4C050APTR Rohm Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V.
Weitere Produktangebote RF4C050APTR nach Preis ab 0.39 EUR bis 1.07 EUR
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RF4C050APTR | Hersteller : Rohm Semiconductor |
 Trans MOSFET P-CH 20V 10A 8-Pin HUML EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4C050APTR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 20V 10A 8-Pin HUML EP T/R |
auf Bestellung 2565 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4C050APTR | Hersteller : ROHM Semiconductor |
MOSFET Pch -20V -10A Middle Power MOSFET |
auf Bestellung 4495 Stücke: Lieferzeit 178-182 Tag (e) |
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RF4C050APTR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 10A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
auf Bestellung 1366 Stücke: Lieferzeit 10-14 Tag (e) |
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| RF4C050APTR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -20A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10A Pulsed drain current: -20A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±8V On-state resistance: 26mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RF4C050APTR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 10A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
Produkt ist nicht verfügbar |
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| RF4C050APTR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -20A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10A Pulsed drain current: -20A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±8V On-state resistance: 26mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |