RF4E080GNTR Rohm Semiconductor
auf Bestellung 2647 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 359+ | 0.43 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| 2500+ | 0.35 EUR |
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Technische Details RF4E080GNTR Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V.
Weitere Produktangebote RF4E080GNTR nach Preis ab 0.22 EUR bis 0.75 EUR
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RF4E080GNTR | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 30V 8A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V |
auf Bestellung 782 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E080GNTR | Hersteller : ROHM Semiconductor |
MOSFET 4.5V Drive Nch MOSFET |
auf Bestellung 3071 Stücke: Lieferzeit 10-14 Tag (e) |
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| RF4E080GNTR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 17.6mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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| RF4E080GNTR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 17.6mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4E080GNTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V |
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