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RFNL10BGE6STL

RFNL10BGE6STL ROHM Semiconductor

datasheet?p=RFNL10BGE6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY 600V 10A
auf Bestellung 2143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.69 EUR
10+ 2.22 EUR
100+ 1.78 EUR
500+ 1.5 EUR
1000+ 1.27 EUR
2500+ 1.21 EUR
5000+ 1.17 EUR
Mindestbestellmenge: 2
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Technische Details RFNL10BGE6STL ROHM Semiconductor

Description: DIODE GEN PURP 600V 10A TO252GE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252GE, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

Weitere Produktangebote RFNL10BGE6STL nach Preis ab 1.36 EUR bis 2.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RFNL10BGE6STL RFNL10BGE6STL Hersteller : Rohm Semiconductor datasheet?p=RFNL10BGE6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.75 EUR
10+ 2.47 EUR
100+ 1.98 EUR
500+ 1.63 EUR
1000+ 1.36 EUR
Mindestbestellmenge: 7
RFNL10BGE6STL RFNL10BGE6STL Hersteller : Rohm Semiconductor datasheet?p=RFNL10BGE6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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