Produkte > HARRIS CORPORATION > RFP8N20
RFP8N20

RFP8N20 Harris Corporation

INSLS10598-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 2366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
523+0.95 EUR
Mindestbestellmenge: 523
Produktrezensionen
Produktbewertung abgeben

Technische Details RFP8N20 Harris Corporation

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V.

Weitere Produktangebote RFP8N20

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RFP8N20 INSLS10598-1.pdf?t.download=true&u=5oefqw
auf Bestellung 6830 Stücke:
Lieferzeit 21-28 Tag (e)