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RFUH10NS6SFHTL

RFUH10NS6SFHTL Rohm Semiconductor


datasheet?p=RFUH10NS6SFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 157pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.93 EUR
2000+ 0.88 EUR
Mindestbestellmenge: 1000
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Technische Details RFUH10NS6SFHTL Rohm Semiconductor

Description: DIODE GEN PURP 600V 10A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 157pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: LPDS, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Qualification: AEC-Q101.

Weitere Produktangebote RFUH10NS6SFHTL nach Preis ab 0.82 EUR bis 2.11 EUR

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Preis ohne MwSt
RFUH10NS6SFHTL RFUH10NS6SFHTL Hersteller : ROHM Semiconductor datasheet?p=RFUH10NS6SFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-263S 10A Io
auf Bestellung 1318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.08 EUR
10+ 1.6 EUR
100+ 1.3 EUR
500+ 1.12 EUR
1000+ 0.92 EUR
2000+ 0.86 EUR
5000+ 0.82 EUR
Mindestbestellmenge: 2
RFUH10NS6SFHTL RFUH10NS6SFHTL Hersteller : Rohm Semiconductor datasheet?p=RFUH10NS6SFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 157pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2814 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.11 EUR
11+ 1.74 EUR
100+ 1.35 EUR
500+ 1.14 EUR
Mindestbestellmenge: 9