RFUH10TF6SFHC9 ROHM Semiconductor
Hersteller: ROHM SemiconductorDiodes - General Purpose, Power, Switching 600V VR 10A IO ITO-220AC; TO-220NFM
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.5 EUR |
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Technische Details RFUH10TF6SFHC9 ROHM Semiconductor
Description: DIODE GEN PURP 600V 10A TO220NFM, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220NFM, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RFUH10TF6SFHC9 nach Preis ab 1.71 EUR bis 2.68 EUR
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RFUH10TF6SFHC9 | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 600V 10A TO220NFM Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 426 Stücke: Lieferzeit 10-14 Tag (e) |
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