RGT00TS65DGC11 ROHM Semiconductor
auf Bestellung 346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.05 EUR |
| 10+ | 7.6 EUR |
| 25+ | 7.16 EUR |
| 100+ | 6.16 EUR |
| 250+ | 5.91 EUR |
| 450+ | 5.54 EUR |
| 900+ | 5.53 EUR |
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Technische Details RGT00TS65DGC11 ROHM Semiconductor
Description: 650V 50A FIELD STOP TRENCH IGBT, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42ns/137ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 277 W.
Weitere Produktangebote RGT00TS65DGC11 nach Preis ab 6.18 EUR bis 9.1 EUR
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RGT00TS65DGC11 | Hersteller : Rohm Semiconductor |
 Description: 650V 50A FIELD STOP TRENCH IGBTPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/137ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 277 W |
auf Bestellung 319 Stücke: Lieferzeit 10-14 Tag (e) |
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