RGT30NL65DGTL ROHM Semiconductor
Hersteller: ROHM SemiconductorIGBT Transistors RGT30NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.4 EUR |
| 10+ | 3.7 EUR |
| 25+ | 3.31 EUR |
| 100+ | 2.99 EUR |
| 250+ | 2.83 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.22 EUR |
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Technische Details RGT30NL65DGTL ROHM Semiconductor
Description: IGBT TRENCH FIELD 650V 30A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/64ns, Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 32 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 133 W.
Weitere Produktangebote RGT30NL65DGTL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RGT30NL65DGTL | Hersteller : ROHM |
Description: ROHM - RGT30NL65DGTL - IGBT, 30 A, 1.65 V, 133 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 133W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: Lead (17-Jan-2023) |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT30NL65DGTL | Hersteller : ROHM |
Description: ROHM - RGT30NL65DGTL - IGBT, 30 A, 1.65 V, 133 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 133W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: Lead (17-Jan-2023) |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGT30NL65DGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 66W; TO263 Mounting: SMD Kind of package: reel; tape Case: TO263 Power dissipation: 66W Gate charge: 32nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 40ns Turn-off time: 204ns Gate-emitter voltage: ±30V Collector current: 15A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RGT30NL65DGTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 30A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 133 W |
Produkt ist nicht verfügbar |
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RGT30NL65DGTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 30A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 133 W |
Produkt ist nicht verfügbar |
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| RGT30NL65DGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 66W; TO263 Mounting: SMD Kind of package: reel; tape Case: TO263 Power dissipation: 66W Gate charge: 32nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 40ns Turn-off time: 204ns Gate-emitter voltage: ±30V Collector current: 15A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |