RGTH00TK65DGC11 ROHM Semiconductor
Hersteller: ROHM Semiconductor
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.07 EUR |
10+ | 9.31 EUR |
25+ | 7.88 EUR |
100+ | 7.73 EUR |
250+ | 6.97 EUR |
900+ | 6 EUR |
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Technische Details RGTH00TK65DGC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 35A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 225 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 39ns/143ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 72 W.
Weitere Produktangebote RGTH00TK65DGC11 nach Preis ab 7.96 EUR bis 11.14 EUR
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RGTH00TK65DGC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 35A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 225 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 72 W |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH00TK65DGC11 | Hersteller : ROHM |
Description: ROHM - RGTH00TK65DGC11 - IGBT, 35 A, 1.6 V, 72 W, 650 V, TO-3PFM, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 72W Bauform - Transistor: TO-3PFM Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 35A SVHC: Lead (17-Jan-2023) |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |