RGTH50TK65DGC11 ROHM Semiconductor
Hersteller: ROHM Semiconductor
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.79 EUR |
10+ | 8.24 EUR |
30+ | 7.97 EUR |
120+ | 6.65 EUR |
270+ | 6.42 EUR |
510+ | 5.91 EUR |
1020+ | 4.77 EUR |
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Technische Details RGTH50TK65DGC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 26A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/94ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Active, Current - Collector (Ic) (Max): 26 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 59 W.
Weitere Produktangebote RGTH50TK65DGC11 nach Preis ab 6.7 EUR bis 9.86 EUR
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RGTH50TK65DGC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 26A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/94ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 59 W |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH50TK65DGC11 | Hersteller : ROHM |
Description: ROHM - RGTH50TK65DGC11 - IGBT, 26 A, 1.6 V, 59 W, 650 V, TO-3PFM, 3 Pin(s) Kollektor-Emitter-Sättigungsspannung: 1.6 MSL: MSL 1 - unbegrenzt Verlustleistung: 59 Bauform - Transistor: TO-3PFM Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 650 Betriebstemperatur, max.: 175 Kollektorstrom: 26 SVHC: Lead (08-Jul-2021) |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |