RGTH60TK65DGC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRNCH FIELD 650V 28A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 61 W
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.4 EUR |
| 30+ | 8.24 EUR |
| 120+ | 7.06 EUR |
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Technische Details RGTH60TK65DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 28A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/105ns, Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 58 nC, Part Status: Active, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 61 W.
Weitere Produktangebote RGTH60TK65DGC11 nach Preis ab 5.44 EUR bis 10.93 EUR
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RGTH60TK65DGC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
auf Bestellung 447 Stücke: Lieferzeit 10-14 Tag (e) |
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