RGTH60TS65DGC13 ROHM Semiconductor
auf Bestellung 1133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.42 EUR |
10+ | 7.9 EUR |
25+ | 7.66 EUR |
100+ | 6.39 EUR |
250+ | 6.2 EUR |
600+ | 5.67 EUR |
1200+ | 4.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RGTH60TS65DGC13 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 58A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/105ns, Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 58 nC, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 194 W.
Weitere Produktangebote RGTH60TS65DGC13 nach Preis ab 5.72 EUR bis 9.47 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RGTH60TS65DGC13 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 58A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 194 W |
auf Bestellung 586 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
RGTH60TS65DGC13 | Hersteller : Rohm Semiconductor | Trans IGBT Chip N-CH 650V 58A 194W 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |