RGTH80TK65DGC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRNCH FIELD 650V 31A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.02 EUR |
| 30+ | 5.61 EUR |
| 120+ | 5.2 EUR |
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Technische Details RGTH80TK65DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 31A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 34ns/120ns, Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 79 nC, Part Status: Active, Current - Collector (Ic) (Max): 31 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 66 W.
Weitere Produktangebote RGTH80TK65DGC11 nach Preis ab 5.39 EUR bis 9.93 EUR
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RGTH80TK65DGC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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