RGTVX2TS65GC11 ROHM Semiconductor
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.75 EUR |
| 10+ | 9.03 EUR |
| 25+ | 7.29 EUR |
| 250+ | 6.48 EUR |
| 450+ | 5.54 EUR |
| 900+ | 5.23 EUR |
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Technische Details RGTVX2TS65GC11 ROHM Semiconductor
Description: IGBT TRENCH FLD 650V 111A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 49ns/150ns, Switching Energy: 2.08mJ (on), 1.15mJ (off), Test Condition: 400V, 60A, 10Ohm, 15V, Gate Charge: 123 nC, Current - Collector (Ic) (Max): 111 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 319 W.
Weitere Produktangebote RGTVX2TS65GC11 nach Preis ab 7.35 EUR bis 10.82 EUR
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RGTVX2TS65GC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRENCH FLD 650V 111A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 49ns/150ns Switching Energy: 2.08mJ (on), 1.15mJ (off) Test Condition: 400V, 60A, 10Ohm, 15V Gate Charge: 123 nC Current - Collector (Ic) (Max): 111 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 319 W |
auf Bestellung 418 Stücke: Lieferzeit 10-14 Tag (e) |
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