RGW60TK65GVC11 ROHM Semiconductor
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.19 EUR |
10+ | 7.71 EUR |
25+ | 7.22 EUR |
100+ | 6.23 EUR |
250+ | 6.04 EUR |
450+ | 5.54 EUR |
900+ | 4.47 EUR |
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Technische Details RGW60TK65GVC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/114ns, Switching Energy: 480µJ (on), 490µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 84 nC, Part Status: Active, Current - Collector (Ic) (Max): 33 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 72 W.
Weitere Produktangebote RGW60TK65GVC11 nach Preis ab 7.34 EUR bis 9.26 EUR
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RGW60TK65GVC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 72 W |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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