RGW80TK65GVC11 ROHM Semiconductor
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.96 EUR |
| 10+ | 8.38 EUR |
| 25+ | 7.83 EUR |
| 100+ | 6.78 EUR |
| 250+ | 6.56 EUR |
| 450+ | 6 EUR |
| 900+ | 4.86 EUR |
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Technische Details RGW80TK65GVC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 39A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/143ns, Switching Energy: 760µJ (on), 720µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 110 nC, Part Status: Active, Current - Collector (Ic) (Max): 39 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 81 W.
Weitere Produktangebote RGW80TK65GVC11 nach Preis ab 6.83 EUR bis 10.05 EUR
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RGW80TK65GVC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRNCH FIELD 650V 39A TO3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/143ns Switching Energy: 760µJ (on), 720µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 39 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 81 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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