RH6L040BGTB1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: NCH 60V 65A, HSMT8, POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 40A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V
Description: NCH 60V 65A, HSMT8, POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 40A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V
auf Bestellung 23400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.44 EUR |
6000+ | 1.39 EUR |
9000+ | 1.34 EUR |
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Technische Details RH6L040BGTB1 Rohm Semiconductor
Description: NCH 60V 65A, HSMT8, POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 7.1mOhm @ 40A, 10V, Power Dissipation (Max): 59W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V.
Weitere Produktangebote RH6L040BGTB1 nach Preis ab 1.46 EUR bis 3.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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RH6L040BGTB1 | Hersteller : Rohm Semiconductor |
Description: NCH 60V 65A, HSMT8, POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 40A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V |
auf Bestellung 24821 Stücke: Lieferzeit 10-14 Tag (e) |
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RH6L040BGTB1 | Hersteller : ROHM Semiconductor | MOSFET N CHAN 60V HSMT8 |
auf Bestellung 8369 Stücke: Lieferzeit 10-14 Tag (e) |
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