RJ1P12BBDTLL ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFET RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching.
auf Bestellung 887 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 8.31 EUR |
| 10+ | 6.97 EUR |
| 25+ | 6.56 EUR |
| 100+ | 5.65 EUR |
| 250+ | 5.33 EUR |
| 500+ | 5.03 EUR |
| 1000+ | 4.29 EUR |
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Technische Details RJ1P12BBDTLL ROHM Semiconductor
Description: MOSFET N-CH 100V 120A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: LPTL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V.
Weitere Produktangebote RJ1P12BBDTLL nach Preis ab 4.23 EUR bis 6.58 EUR
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| RJ1P12BBDTLL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) LPTL T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RJ1P12BBDTLL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) LPTL T/R |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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| RJ1P12BBDTLL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 100V Drain current: 120A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1000 Stücke |
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RJ1P12BBDTLL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 100V 120A LPTL Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: LPTL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V |
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RJ1P12BBDTLL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 100V 120A LPTL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: LPTL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V |
Produkt ist nicht verfügbar |
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| RJ1P12BBDTLL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 100V Drain current: 120A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |