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RMLV0816BGSD-4S2#HC0

RMLV0816BGSD-4S2#HC0 Renesas Electronics Corporation


rmlv0816bgsd-4s2-datasheet?r=507286 Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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Technische Details RMLV0816BGSD-4S2#HC0 Renesas Electronics Corporation

Description: IC SRAM 8MBIT PARALLEL 52TSOP II, Packaging: Tape & Reel (TR), Package / Case: 52-TFSOP (0.350", 8.89mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM, Memory Format: SRAM, Supplier Device Package: 52-TSOP II, Write Cycle Time - Word, Page: 45ns, Memory Interface: Parallel, Access Time: 45 ns, Memory Organization: 1M x 8, 512K x 16, DigiKey Programmable: Not Verified.

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RMLV0816BGSD-4S2#HC0 RMLV0816BGSD-4S2#HC0 Hersteller : Renesas Electronics Corporation rmlv0816bgsd-4s2-datasheet?r=507286 Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Cut Tape (CT)
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
RMLV0816BGSD-4S2#HC0 Hersteller : Renesas Electronics r10ds0253ej0200_memory-1092915.pdf SRAM 8Mb 3V Adv.SRAM x16 TSOP52 45ns WTR
Produkt ist nicht verfügbar