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RMWV6416AGSD-5S2#HA0

RMWV6416AGSD-5S2#HA0 Renesas Electronics America Inc


rmwv6416a-series-datasheet Hersteller: Renesas Electronics America Inc
Description: IC SRAM 64MBIT PAR 52TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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Technische Details RMWV6416AGSD-5S2#HA0 Renesas Electronics America Inc

Description: IC SRAM 64MBIT PAR 52TSOP II, Packaging: Tape & Reel (TR), Package / Case: 52-TFSOP (0.350", 8.89mm Width), Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM, Memory Format: SRAM, Supplier Device Package: 52-TSOP II, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 8M x 8, 4M x 16, DigiKey Programmable: Not Verified.

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RMWV6416AGSD-5S2#HA0 Hersteller : Renesas Electronics REN_r10ds0278ej0100_memory_a_DST_20181226-1999465.pdf SRAM SRAM 64MB ADV. 3V TSOP52 55NS -40TO85C
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