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RQ3E100BNTB1

RQ3E100BNTB1 Rohm Semiconductor


datasheet?p=RQ3E100BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: NCH 30V 21A POWER MOSFET: RQ3E10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.71 EUR
6000+ 0.67 EUR
Mindestbestellmenge: 3000
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Technische Details RQ3E100BNTB1 Rohm Semiconductor

Description: NCH 30V 21A POWER MOSFET: RQ3E10, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V.

Weitere Produktangebote RQ3E100BNTB1 nach Preis ab 0.75 EUR bis 1.87 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RQ3E100BNTB1 RQ3E100BNTB1 Hersteller : Rohm Semiconductor datasheet?p=RQ3E100BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 21A POWER MOSFET: RQ3E10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 8642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.71 EUR
13+ 1.4 EUR
100+ 1.09 EUR
500+ 0.92 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 11
RQ3E100BNTB1 RQ3E100BNTB1 Hersteller : ROHM Semiconductor datasheet?p=RQ3E100BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET MOSFET
auf Bestellung 3333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.87 EUR
10+ 1.68 EUR
100+ 1.31 EUR
500+ 1.08 EUR
Mindestbestellmenge: 2