RQ3P045ATTB1 ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFET RQ3P045AT is a low on-resistance MOSFET suitable for switching and load switches.
MOSFET RQ3P045AT is a low on-resistance MOSFET suitable for switching and load switches.
auf Bestellung 2619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.59 EUR |
10+ | 2.15 EUR |
100+ | 1.72 EUR |
250+ | 1.58 EUR |
500+ | 1.43 EUR |
1000+ | 1.3 EUR |
3000+ | 1.13 EUR |
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Technische Details RQ3P045ATTB1 ROHM Semiconductor
Description: PCH -100V -14.5A POWER MOSFET: R, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc), Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V.
Weitere Produktangebote RQ3P045ATTB1 nach Preis ab 1.23 EUR bis 2.6 EUR
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RQ3P045ATTB1 | Hersteller : Rohm Semiconductor |
Description: PCH -100V -14.5A POWER MOSFET: R Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc) Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V |
auf Bestellung 2798 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3P045ATTB1 | Hersteller : Rohm Semiconductor |
Description: PCH -100V -14.5A POWER MOSFET: R Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc) Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V |
Produkt ist nicht verfügbar |