RQ6E035SPTR ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFET RQ6E035SP is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
MOSFET RQ6E035SP is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
auf Bestellung 7118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.03 EUR |
10+ | 0.9 EUR |
100+ | 0.62 EUR |
500+ | 0.52 EUR |
1000+ | 0.44 EUR |
3000+ | 0.39 EUR |
6000+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RQ6E035SPTR ROHM Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V.
Weitere Produktangebote RQ6E035SPTR nach Preis ab 0.44 EUR bis 1.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RQ6E035SPTR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 3.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V |
auf Bestellung 2704 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
RQ6E035SPTR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 3.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V |
Produkt ist nicht verfügbar |