RQ6E085BNTCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 30V 8.5A SOT457
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RQ6E085BNTCR Rohm Semiconductor
Description: MOSFET N-CH 30V 8.5A SOT457, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V, Power Dissipation (Max): 1.25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V.
Weitere Produktangebote RQ6E085BNTCR nach Preis ab 0.64 EUR bis 1.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RQ6E085BNTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 8.5A SOT457 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
auf Bestellung 3490 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
RQ6E085BNTCR | Hersteller : ROHM Semiconductor |
MOSFET Nch 30V 8.5A Si MOSFET |
auf Bestellung 1585 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| RQ6E085BNTCR | Hersteller : ROHM SEMICONDUCTOR |
RQ6E085BNTCR SMD N channel transistors |
Produkt ist nicht verfügbar |