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RQ6P020ATTCR

RQ6P020ATTCR Rohm Semiconductor

rq6p020attcr-e.pdf Hersteller: Rohm Semiconductor
Description: PCH -100V -2A POWER MOSFET: RQ6P
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
auf Bestellung 5125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.18 EUR
100+ 0.82 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
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Technische Details RQ6P020ATTCR Rohm Semiconductor

Description: PCH -100V -2A POWER MOSFET: RQ6P, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V.

Weitere Produktangebote RQ6P020ATTCR nach Preis ab 0.48 EUR bis 1.36 EUR

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Preis ohne MwSt
RQ6P020ATTCR Hersteller : ROHM Semiconductor rq6p020attcr-e.pdf MOSFET RQ6P020AT is a low on-resistance MOSFET suitable for Switching, Load switch.
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.36 EUR
10+ 1.19 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.59 EUR
3000+ 0.5 EUR
6000+ 0.48 EUR
Mindestbestellmenge: 3
RQ6P020ATTCR RQ6P020ATTCR Hersteller : Rohm Semiconductor rq6p020attcr-e.pdf Description: PCH -100V -2A POWER MOSFET: RQ6P
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
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