RTL035N03TR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 30V 3.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.35 EUR |
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Technische Details RTL035N03TR Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V.
Weitere Produktangebote RTL035N03TR nach Preis ab 0.36 EUR bis 1.04 EUR
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RTL035N03TR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V |
auf Bestellung 5750 Stücke: Lieferzeit 10-14 Tag (e) |
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RTL035N03TR | Hersteller : ROHM Semiconductor |
MOSFET N-CH 30V 3.5A TUMT6 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RTL035N03TR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6 Case: TUMT6 Polarisation: unipolar Pulsed drain current: 14A Power dissipation: 1W Gate charge: 4.6nC Drain current: 3.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape On-state resistance: 79mΩ Gate-source voltage: ±12V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTL035N03TR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6 Case: TUMT6 Polarisation: unipolar Pulsed drain current: 14A Power dissipation: 1W Gate charge: 4.6nC Drain current: 3.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape On-state resistance: 79mΩ Gate-source voltage: ±12V Mounting: SMD |
Produkt ist nicht verfügbar |