RX3P07BBHC16 ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFETs RX3P07BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
auf Bestellung 1876 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.11 EUR |
| 10+ | 5.14 EUR |
| 25+ | 4.84 EUR |
| 100+ | 4.15 EUR |
| 250+ | 3.92 EUR |
| 500+ | 3.7 EUR |
| 1000+ | 3.13 EUR |
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Technische Details RX3P07BBHC16 ROHM Semiconductor
Description: NCH 100V 70A, TO-220AB, POWER MO, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 70A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V.
Weitere Produktangebote RX3P07BBHC16 nach Preis ab 2.75 EUR bis 6.53 EUR
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RX3P07BBHC16 | Hersteller : Rohm Semiconductor |
Description: NCH 100V 70A, TO-220AB, POWER MO Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 70A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V |
auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
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