Technische Details S1MSP1-7 Diodes Incorporated
Description: DIODE GP 1KV 1A POWERDI123, Packaging: Tape & Reel (TR), Package / Case: POWERDI®123, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.2 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: PowerDI™ 123, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote S1MSP1-7
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S1MSP1-7 | Hersteller : Diodes Incorporated |
Description: DIODE GP 1KV 1A POWERDI123 Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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